| PART |
Description |
Maker |
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSHG5510 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| TSHF5410 |
High Speed Infrared Emitting Diode in T-1 3/4 Package
|
Vishay Siliconix
|
| VSMF2890GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| VSMB2943GX01 VSMB2943RGX01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| VSMB2943SLX01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| VSLB9530S |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| VSMY2850RG11 |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
